A F M Anhar Uddin Bhuiyan wearing a blue suit, pink tie and glasses and smiling at the camera.

Anhar Bhuiyan, Ph.D.

Assistant Professor

College
Francis College of Engineering
Department
Electrical and Computer Engineering
Phone
978-934-3382
Office
Ball Hall, Room 327
Email
afmanharuddin_bhuiyan@uml.edu
Links

Expertise

(Ultra)wide Bandgap Semiconductors, Superconductors, Epitaxial Growth and Characterization, Device Design and Fabrication, Radiation, Thermal Management

Research Interests

High-power and high-frequency Electronics, Ultraviolet Optoelectronics, Radiation-hardened and Nuclear/Extreme-environment Electronics, Quantum and Cryogenic electronics, Advanced Thermal Management in Semiconductor Technologies

Education

  • Doctor of Philosophy (Ph.D.): Electrical Engineering, The Ohio State University, Columbus, Ohio
  • Master of Science (M.S.): Electrical Engineering, The Ohio State University, Columbus, Ohio
  • Bachelor of Science (B.S): Electrical and Electronic Engineering (2014), Bangladesh University of Engineering and Technology, Dhaka, Bangladesh

Biosketch

Anhar Bhuiyan is a Tenure-Track Assistant Professor in the Department of Electrical and Computer Engineering at University of Massachusetts Lowell, where he leads research on wide and ultrawide bandgap semiconductor materials and devices. His work integrates epitaxial growth, advanced characterization, and device engineering, with a particular focus on radiation-hardened and thermally managed electronics for high-power applications in space, defense, and nuclear environments. Before joining UMass Lowell, he earned his Ph.D. from The Ohio State University (OSU) in 2023, where his research focused on Metalorganic Chemical Vapor Deposition of ultra-wide bandgap Ga2O3 semiconductors. During his doctoral studies, he was nominated for the 'Exemplary Graduate Student Researcher' in the College of Engineering at OSU and was awarded the ‘Presidential Fellowship Award’ – which is considered as the highest honor from the Graduate School at OSU. He also won the 'Best Student Presentation Award' at the 63rd Electronic Materials Conference in 2021. His research has received widespread recognition, with several publications featured as Editor’s Pick, Hot Paper, and Featured Article in leading scientific journals. Multiple articles have also been highlighted among the Most Cited Articles, Most Read Editor’s Picks, and Most Read Scilights. As a faculty member at UMass Lowell, he is the recipient of the Ralph E. Powe Junior Faculty Enhancement Award (2025), sponsored by Oak Ridge Associated Universities.

Selected Awards and Honors

  • Ralph E. Powe Junior Faculty Enhancement Award (2025), Oak Ridge Associated Universities (ORAU)
  • Presidential Fellowship Award (2022), The Ohio State University
  • Best Student Presentation Award (2021), (63rd Electronic Materials Conference)

Selected Publications

  • S. Margiotta, B. Liu, S. A. Khan, G. C. Ortiz, A. Ibreljic, J. Hwang, A F M A. U. Bhuiyan, “Thermal Annealing and Radiation Effects on Structural and Electrical Properties of NbN/GaN Superconductor/Semiconductor Junctions” J. Vac. Sci. Technol. A 43, 042701 (2025).
  • A F M A. U. Bhuiyan, L. Meng, D. S. Yu, S. Dhara, H.-L. Huang, V. G. T. Vangipuram, J. Hwang, S. Rajan, H. Zhao, “Electrical and Structural Properties of In-Situ MOCVD Grown Al2O3/Ga2O3 and Al2O3/(AlxGa1-x)2O3 MOSCAPs”, J. Appl. Phys. 137, 174101 (2025).
  • S. A. Khan, A. Ibreljic, S. Margiotta, and A F M A. U. Bhuiyan, “Low-pressure CVD grown Si-doped ß-Ga2O3 films with promising electron mobilities and high growth rates”, Appl. Phys. Lett. 126, 012103 (2025).
  • S. A. Khan, S. Saha, U. Singisett, and A F M A. U. Bhuiyan, “Radiation Resilience of ß-Ga2O3 Schottky Barrier Diodes Under High Dose Gamma Radiation”, J. Appl. Phys. 136, 225701 (2024).
  • A F M A. U. Bhuiyan, L. Meng, H.-L. Huang, C. Chae, J. Hwang, and H. Zhao, “Al Incorporation up to 99% in Metalorganic Chemical Vapor Deposition-Grown Monoclinic (AlxGa1–x)2O3 Films Using Trimethylgallium” Phys. Status Solidi RRL 2300224. (2023).
  • A F M A. U. Bhuiyan, L. Meng, H.-L. Huang, J. Sarker, C. Chae, B. Mazumder, J. Hwang, and H. Zhao, “Metalorganic Chemical Vapor Deposition of ß-(AlxGa1-x)2O3 thin films on (001) ß-Ga2O3 substrates”, APL Materials 11, 041112 (2023).
  • (Invited Tutorial) A F M A. U. Bhuiyan, Z. Feng, L. Meng, and H. Zhao, “Tutorial: Metalorganic Chemical Vapor Deposition of ß-Ga2O3 thin films, alloys and heterostructures”, Journal of Applied Physics 133, 211103 (2023).
  • A F M A. U. Bhuiyan, L. Meng, H.-L. Huang, J. Hwang, and H. Zhao, “MOCVD In-situ Growth of Al2O3 Dielectric on ß-Ga2O3 and ß-(AlxGa1-x)2O3 thin films”, J. Appl. Phys. 132, 165301 (2022).
  • A F M A. U. Bhuiyan, Z. Feng, L. Meng, H.-L. Huang, J. Hwang, and H. Zhao, “MOCVD growth and band offsets of ?-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates”, J. Vac. Sci. Technol. A 40, 062704 (2022).
  • A F M A. U. Bhuiyan, Z. Feng, L. Meng, A. Fiedler, H.-L. Huang, A. T. Neal, E. Steinbrunner, S. Mou, J. Hwang, S. Rajan and H. Zhao, “Si doping in MOCVD grown (010) ß-(AlxGa1-x)2O3 thin films” J. Appl. Phys.131, 145301 (2022).
  • A F M A. U. Bhuiyan, Z. Feng, H. -L. Huang, L. Meng, J. Hwang, H. Zhao, “Band offsets at metalorganic chemical vapor deposited ß-(AlxGa1-x)2O3/ß-Ga2O3 interfaces - Crystalline orientation dependence” J. Vac. Sci. Technol. A 39, 063207 (2021).
  • A F M A. U. Bhuiyan, Z. Feng, H. -L. Huang, L. Meng, J. Hwang, H. Zhao, “Metalorganic chemical vapor deposition of a-Ga2O3 and a-(AlxGa1-x)2O3 thin films on m-plane sapphire substrates”, APL Materials 9, 101109 (2021).
  • (Invited Featured Paper) A F M A. U. Bhuiyan, Z. Feng, L. Meng, H. Zhao, “MOCVD growth of (010) ß-(AlxGa1-x)2O3 thin films” J. Mater. Res. 36, 4804 (2021).
  • A F M A. U. Bhuiyan, Z. Feng, J. M. Johnson, H.-L. Huang, J. Hwang, and H. Zhao, “MOCVD epitaxy of ultra-wide bandgap ß-(AlxGa1-x)2O3 with high-Al composition on (100) ß-Ga2O3 substrates”, ACS Crys. Growth Des., 20, 6722 (2020).
  • A F M A. U. Bhuiyan, Z. Feng, J. M. Johnson, H.-L. Huang, J. Sarker, M. Zhu, M. R. Karim, B. Mazumder, J. Hwang, and H. Zhao, “Response to Comment on "Phase Transformation in MOCVD Growth of (AlxGa1-x)2O3 Thin Films”, APL Materials, 8, 089102, (2020).
  • A F M A. U. Bhuiyan, S. Subrina, “Asymmetric Channel Junctionless Field-Effect Transistors: a MOS Structure Biosensor” Silicon 14, 2489 (2021).
  • (Editor’s Pick) A F M A. U. Bhuiyan, Z. Feng, J. M. Johnson, H. -L. Huang, J. Hwang, H. Zhao, “Band Offsets of (100) ß-(AlxGa1-x)2O3/ß-Ga2O3 Heterointerfaces Grown via MOCVD”, Appl. Phys. Lett. 117, 252105 (2020).
  • A F M A. U. Bhuiyan, Z. Feng, J. M. Johnson, H.-L. Huang, J. Sarker, M. Zhu, M. R. Karim, B. Mazumder, J. Hwang, and H. Zhao, “Phase Transformation in MOCVD Growth of (AlxGa1-x)2O3 Thin Films”, APL Materials, 8, 031104 (2020). 'Most Cited Articles from 2020 and 2021' in APL Materials.
  • (Editor’s Pick) A F M A. U. Bhuiyan, Z. Feng, J. M. Johnson, Z. Chen, H. -L. Huang, J. Hwang, H. Zhao, “MOCVD epitaxy of ß-(AlxGa1-x)2O3 thin films on (010) Ga2O3 substrates and N-type doping”, Appl. Phys. Lett., 115, 120602 (2019); “Most Read Editor’s Pick in 2019”
  • E. Kluth, A F M A. U. Bhuiyan, L. Meng, J. Bläsing, H. Zhao, R. Goldhahn, and M. Feneberg, “Determination of anisotropic optical properties of MOCVD grown m-plane a-(AlxGa1-x)2O3 alloys”, Jpn. J. Appl. Phys. 62, 051001 (2023).
  • Z. Ren, H.-C. Huang, H. Lee, C. Chan, H. C Roberts, X. Wu, A. Waseem, A F M A. U. Bhuiyan, H. Zhao, W. Zhu, and X. Li, “Temperature Dependent Characteristics of Lateral ß-Ga2O3 Fin-MOSFETs by MacEtch”, Appl. Phys. Lett. 123, 043505 (2023).
  • J. F. McGlone, H. Ghadi, E. Cornuelle, A. Armstrong, G. Burns, Z. Feng, A F M A. U. Bhuiyan, H. Zhao, A. R. Arehart, and S. A. Ringel, “Proton Radiation Effects on Electronic Defect States in High-Mobility MOCVD-Grown (010) ß-Ga2O3”, J. Appl. Phys. 133, 045702 (2023).
  • L. Meng, A F M A. U. Bhuiyan, Z. Feng, H.-L. Huang, J. Hwang, and H. Zhao, “Metalorganic chemical vapor deposition of (100) ß-Ga2O3 on on-axis Ga2O3 substrates”, J. Vac. Sci. Technol. A 40, 062706 (2022).
  • C. N. Saha, A. Vaidya, A F M A. U. Bhuiyan, L. Meng, H. Zhao, and U. Singisetti “Highly Scaled ß-Ga2O3 thin channel MOSFET with 5.12 MV/cm average breakdown field and enhanced RF performance” Appl. Phys. Lett. 122, 182106 (2023).
  • S. Sharma, L. Meng, A F M A. U. Bhuiyan, Z. Feng, D. Eason, H. Zhao and U. Singisetti, “Vacuum annealed ß-Ga2O3 recess channel MOSFETs with 8.56 kV Breakdown Voltage”, IEEE Trans Electron Devices 43(12), 2029 (2022).
  • (Editor’s Pick) H.-C. huang, Z. Ren, A F M A. U. Bhuiyan, Z. Feng, Z. Yang, X. Luo, A. Huang, A. Green, K. Chabak, H. Zhao, and Xiuling Li, “ß-Ga2O3 FinFETs with ultra-low hysteresis by Plasma-Free Metal-Assisted Chemical Etching” Appl. Phys. Lett. 121, 052102 (2022).
  • K. Zhang, C. Hu, A F M A. U. Bhuiyan, M. Zhu, V. G. T. Vangipuram, M. R. Karim, B. H. D. Jayatunga, J. Hwang, K. Kash, and H. Zhao, “Pulsed-mode MOCVD growth of ZnSn(Ga)N2 and determination of the valence band offset with GaN” ACS Crys. Growth Des. 22, 5004 (2022).
  • L. Meng, Z. Feng, A F M A. U. Bhuiyan, and H. Zhao, “High-Mobility MOCVD ß-Ga2O3 Epitaxy with Fast Growth Rate Using Trimethylgallium” Cryst. Growth Des. 22(6), 3896 (2022).
  • S. Saha, L. Meng, Z. Feng, A F M A. U. Bhuiyan, H. Zhao, and U. Singisetti, “Schottky diode characteristics on high-growth rate LPCVD ß-Ga2O3 films on (010) and (001) Ga2O3 substrates” Appl. Phys. Lett. 120, 122106 (2022).
  • N. K. Kalarickal, A. Fiedler, S. Dhara, H.-L. Huang, A F M A. U. Bhuiyan, M. W. Rahman, T. Kim, Z. Xia, Z. J. Eddine, A. Dheenan, M. Brenner, H. Zhao, J. Hwang, and S. Rajan, “Planar and three-dimensional damage-free etching of ß-Ga2O3 using atomic gallium flux” Appl. Phys. Lett. 119, 123503 (2021).
  • (Featured Article) Y. Zheng, Z. Feng, A F M A. U. Bhuiyan, L. Meng, S. Dhole, Q. Jia, H. Zhao, J.-H. Seo, “Large-Size Free-Standing Single-crystal ß-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off” J. Mater. Chem. C 9, 6180 (2021); “2021 Journal of Materials Chemistry C HOT Papers”
  • (Featured Article) J. M. Johnson, H.-L. Huang, M. Wang, S. Mu, J. B. Varley, A. F. M. A. U. Bhuiyan, Z. Feng, N. K. Kalarickal, S. Rajan, H. Zhao, C. G. Van de Walle, and J. Hwang, “Atomic Scale Investigation of Aluminum Incorporation, Defects, and Phase Stability in ß-(AlxGa1-x)2O3 Films” APL Materials 9, 051103 (2021).
  • Z. Feng, A. F. M. A. U. Bhuiyan, N. K. Kalarickal, S. Rajan and H. Zhao, “Mg acceptor doping in MOCVD (010) ß-Ga2O3” Appl. Phys. Lett. 117, 222106 (2020).
  • (Editor’s Pick) Hemant Ghadi, Joe F. McGlone, Zixuan Feng, A F M A. U. Bhuiyan, Hongping Zhao, Aaron R. Arehart, and Steven A. Ringel, “Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown ß-Ga2O3” Appl. Phys. Lett. 117, 172106 (2020).
  • (Editor’s Pick) A F M A. U. Bhuiyan, Z. Feng, J. M. Johnson, H.-L. Huang, J. Hwang, and H. Zhao, “MOCVD growth of ß-phase (AlxGa1-x)2O3 on (-201) ß-Ga2O3 substrates” Appl. Phys. Lett. 117, 142107 (2020).
  • J. Sarker, A F M A. U. Bhuiyan, Z. Feng, H. Zhao, B. Mazumder, “Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography”, J. Phys. D: Appl. Phys. 54 184001 (2021).
  • N. K. Kalarickal, Z. Feng, A F M A. U. Bhuiyan, Z. Xia, J. Mcglone, W. Moore, A. R. Arehart, S. A. Ringel, H. Zhao, S. Rajan, Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors, IEEE Trans Electron Devices 68 (1), 29 (2020).
  • Z. Feng, A F M A. U. Bhuiyan, Z. Xia, W. Moore, Z. Chen, J. F. McGlone, D. R. Daughton, A. R. Arehart, S. A. Ringel, S. Rajan, H. Zhao, “Probing charge transport and background doping in MOCVD grown (010) ß-Ga2O3”, Phys. Status Solidi RRL, 14 (8), 2000145 (2020).
  • J. Sarker, S. Broderick, A F M A. U. Bhuiyan, Z. Feng, H. Zhao, B. Mazumder, “A combined approach of Atom Probe Tomography and unsupervised machine learning to understand phase transformation in (AlxGa1-x)2O3”, Appl. Phys. Lett., 116, 152101 (2020).
  • H. Ghadi, J. F. McGlone, C. M. Jackson, E. Farzana, Z. Feng, A F M A. U. Bhuiyan, H. Zhao, A. R. Arehart, S. A. Ringel, “Full bandgap defect state characterization of ß-Ga2O3 grown by metal organic chemical vapor deposition”, APL Materials, 8, 021111 (2020).
  • (Featured Article) Z. Feng, A F M A. U. Bhuiyan, M. R. Karim, H. Zhao, “MOCVD homoepitaxy of Si-doped (010) ß-Ga2O3 thin films with superior transport properties”, Appl. Phys. Lett., 114, 250601 (2019); Highlighted in ‘Scilight 2019’, “Most Read Scilights from 2018-2019”

Selected Presentations

  • A F M A. U. Bhuiyan, L. Meng, H.-L. Huang, C. Chae, J. Hwang, and H. Zhao, “Pushing the Al composition limit up to 99% in MOCVD ß-(AlxGa1-x)2O3 films using TMGa as Ga precursor” 5th International Workshop on Gallium Oxide and Related Materials- IWGO, August 2023 (Buffalo, New York).
  • A F M A. U. Bhuiyan, L. Meng, H.-L. Huang, J. Sarkar, M. Zhu, B. Mazumder, J. Hwang, and H. Zhao, “MOCVD epitaxial development of differently oriented ß-(AlxGa1-x)2O3 films with fast growth rates and Al composition up to 63%” 4th International Workshop on Gallium Oxide and Related Materials- IWGO, October 2022 (Nagano, Japan).
  • A F M A. U. Bhuiyan, Z. Feng, L. Meng, H.-L. Huang, J. Hwang, and H. Zhao, “MOCVD Development and Bandoffsets of e-Ga2O3 on GaN, AlN, YSZ and c-Sapphire Substrates” EMC, June 2022. (Columbus, Ohio)
  • A F M A. U. Bhuiyan, Z. Feng, L. Meng, A. Fiedler, H.-L. Huang, A. T. Neal, E. Steinbrunner, S. Mou, J. Hwang, S. Rajan and H. Zhao, “MOCVD growth of Si Doped (010) ß-(AlxGa1-x)2O3 Films-Structural and Electrical Properties” EMC, June 2022. (Columbus, Ohio)
  • A F M A. U. Bhuiyan, Z. Feng, H.-L. Huang, L. Meng, J. Hwang, and H. Zhao, “MOCVD Epitaxy of a-(AlxGa1-x)2O3 (x =0-100%) on m-Plane Sapphire Substrate”, Compound Semiconductor Week, June. 2022. (Ann arbor, Michigan)
  • A F M A. U. Bhuiyan, L. Meng, Z. Feng, H.-L. Huang, J. Hwang, H. Zhao, “In Situ MOCVD Growth of Dielectric Al2O3 on ß-(AlxGa1-x)2O3: Interfaces and Band Offsets”, 2022 MRS Spring Meeting, May. 2022. (Honolulu, Hawaii)
  • A F M A. U. Bhuiyan, Z. Feng, J. Johnson, H.-L. Huang, J. Hwang, and H. Zhao, “MOCVD Epitaxy of ß-(AlxGa1-x)2O3 Films on (100) and (-201) ß-Ga2O3 Substrates with Al Compositions up to 52%”, 2021 MRS Spring Meeting, Apr. 2021. (Virtual)
  • (Best Student Presentation Award) A F M A. U. Bhuiyan, Z. Feng, L. Meng, J. Johnson, H.-L Huang, J. Hwang and H. Zhao, “Orientation-Dependent Band Offsets at MOCVD Grown ß-(AlxGa1–x)2O3/ß-Ga2O3 Heterointerfaces” EMC, June 2021. (Virtual)
  • A F M A. U. Bhuiyan, Z. Feng, J. M. Johnson, Z. Chen, H.-L. Huang, J. Hwang, H. Zhao, “MOCVD growth and characterizations of ß-(AlxGa1-x)2O3 thin films and N-type doping”, MRS Spring Meeting, Nov. 2020. (Virtual)
  • A F M A. U. Bhuiyan, Z. Feng, J. Johnson, H.-L. Huang, J. Sarker, M. Zhu, M. R. Karim, B. Mazumder, J. Hwang, H. Zhao, “MOCVD Growth, Characterization and Phase Transformation of (AlxGa1-x)2O3 Thin Films”, EMC, June 2020. (Virtual)
  • (Best Paper Award) Z. Feng, A F M A. U. Bhuiyan, M. Karim, H. Zhao, “MOCVD Epitaxy of Si-doped ß-Ga2O3 Thin Films with Record High Electron Mobilities”, IWGO, Columbus, OH, Aug. 2019.
  • A F M A. U. Bhuiyan, Z. Feng, Z. Chen, J. Johnson, H.-L. Huang, J. Hwang, H. Zhao, “MOCVD Growth of ß-(AlxGa1-x)2O3 Thin Films on Ga2O3 Substrates”, IWGO 2019, Columbus, OH, Aug. 2019.

Selected Intellectual Property

  • H. Zhao, A F M A. U. Bhuiyan, Z. Feng, Deposition of single-phase beta-(AlxGa1-x)2O3 thin films with 0.28< =x<=0.7 on beta Ga2O3 (100) or (-201) substrates by chemical vapor deposition, Patent No. US 11,624,126 (Date of Patent: Apr 11, 2023).
  • H. Zhao, A F M A. U. Bhuiyan, L. Meng, Compositions comprising galium oxide doped with carbon, and methods of making and use thereof, Application Number: 63/358,634 (US Provisional Patent Pending) (2022).
  • H. Zhao, A F M A. U. Bhuiyan, L. Meng, Compositions, methods, and devices, Application Number: 63/431,778 (US Provisional Patent Pending) (2022).
  • H. Zhao, A F M A. U. Bhuiyan, L. Meng, Compositions, methods, and devices, Application Number: 63/398,959 (US Provisional Patent Pending) (2022).