EECE.5050 — Graduate

Id: 003261 Offering: 1 Credits: 3-3

Description

Review of p-n junction theory, depletion layer width and junction capacitance, Schottky barrier diodes, pin diodes and applications in switches and phase shifters, varactors and step recovery diodes, tunnel diodes and circuits, Gunn devices and circuits, avalanche diodes, IMPATT, TRAPATT and BARRITT diodes, microwave bipolar junction transistors (BJT) and field effect transistors (FET), small signal amplifier design, new devices like HEMT and Si-Ge devices, traveling wave tubes and klystrons.

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EECE.5050 — Online and Continuing Education

Id: 003261 Offering: 2 Credits: 3-3

Description

Review of p-n junction theory, depletion layer width and junction capacitance, Schottky barrier diodes, pin diodes and applications in switches and phase shifters, varactors and step recovery diodes, tunnel diodes and circuits, Gunn devices and circuits, avalanche diodes, IMPATT, TRAPATT and BARRITT diodes, microwave bipolar junction transistors (BJT) and field effect transistors (FET), small signal amplifier design, new devices like HEMT and Si-Ge devices, traveling wave tubes and klystrons.

Prerequisites

Students with a CSCE or UGRD career need permission to take Graduate Level Courses.

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